Display apparatus and manufacturing method thereof

ABSTRACT

A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes: a first substrate including a light emitting diode part including a plurality of light emitting diodes regularly arranged on the first substrate; and a second substrate including a TFT panel unit including a plurality of TFTs driving the light emitting diodes. The first substrate and the second substrate are coupled to each other so as to face each other such that the light emitting diodes are electrically connected to the TFTs, respectively. The display apparatus is implemented using micro-light emitting diodes formed of nitride semiconductors and thus can provide high efficiency and high resolution to be applicable to a wearable apparatus while reducing power consumption.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of U.S. provisionalpatent application Nos. 62/196,282, filed on Jul. 23, 2015, and62/267,770, filed on Dec. 15, 2015, each of which is incorporated byreference for all purposes as if fully set forth herein.

BACKGROUND

Field

Exemplary embodiments of the present disclosure relate to a displayapparatus and a method of manufacturing the same, and more particularly,to a display apparatus using micro-light emitting diodes and a method ofmanufacturing the same.

Discussion of the Background

A light emitting diode refers to an inorganic semiconductor deviceconfigured to emit light through recombination of electrons and holes,and has been used in various fields including displays, automobilelamps, general lighting, and the like. Since the light emitting diodehas various advantages such as long lifespan, low power consumption, andrapid response, it is expected that a light emitting device using thelight emitting diode will replace existing light sources.

Recently, smart TVs or monitors have realized colors using a thin filmtransistor liquid crystal display (TFT LCD) panel and tend to use lightemitting diodes (LEDs) as a light source for a backlight unit for colorrealization. In addition, a display apparatus is often manufacturedusing organic light emitting diodes (OLEDs). However, for a TFT-LCD,since one LED is used as a light source for many pixels, a light sourceof a backlight unit is always turned on. Accordingly, the TFT-LCDsuffers from constant power consumption regardless of brightness on adisplayed screen. In order to compensate for this problem, some displayapparatuses are configured to divide a screen into several regions so asto allow control of brightness in these regions. However, since severalto dozens of thousands of pixels are used as a unit for division of thescreen, it is difficult to achieve accurate regulation of brightnesswhile reducing power consumption. On the other hand, although an OLEDhas continuously reduced power consumption through development oftechnology, the OLED still has much higher power consumption than LEDsformed of inorganic semiconductors, and thus has low efficiency.

In addition, a PM drive type OLED can suffer from deterioration inresponse speed upon pulse amplitude modulation (PAM) of the OLED havinglarge capacitance, and can suffer from deterioration in lifespan uponhigh current driving through pulse width modulation (PWM) for realizinga low duty ratio. Moreover, an AM driving type OLED requires connectionof TFTs for each pixel, thereby causing increase in manufacturing costsand non-uniform brightness according to characteristics of TFTs.

The above information disclosed in this Background section is only forenhancement of understanding of the background of the inventive concept,and, therefore, it may contain information that does not form the priorart that is already known in this country to a person of ordinary skillin the art.

SUMMARY

Exemplary embodiments provide a display apparatus using micro-lightemitting diodes providing low power consumption to be applicable to awearable apparatus, a smartphone, or a TV, and a method of manufacturingthe same.

Exemplary embodiments provide a display apparatus providing low powerconsumption and enabling accurate regulation of brightness and a methodof manufacturing the same.

Additional aspects will be set forth in the detailed description whichfollows, and, in part, will be apparent from the disclosure, or may belearned by practice of the inventive concept.

An exemplary embodiment discloses a display apparatus including: a firstsubstrate including a light emitting diode part including a plurality oflight emitting diodes regularly arranged on the first substrate; and asecond substrate including a TFT panel unit including a plurality ofTFTs driving the light emitting diodes, wherein the first substrate andthe second substrate are coupled to each other so as to face each othersuch that the light emitting diodes are electrically connected to theTFTs, respectively.

The display apparatus may also include: a support substrate; a pluralityof blue light emitting diodes arranged on an upper surface of thesupport substrate; a plurality of green light emitting diodes arrangedon the upper surface of the support substrate to be placed adjacent theplurality of blue light emitting diodes; and a plurality of red lightemitting diodes arranged on the upper surface of the support substrateto be placed adjacent either the plurality of blue light emitting diodesor the plurality of green light emitting diodes.

Each of the plurality of blue light emitting diodes, the plurality ofgreen light emitting diodes and the plurality of red light emittingdiodes may include an n-type semiconductor layer; a p-type semiconductorlayer; an active layer interposed between the n-type semiconductor layerand the p-type semiconductor layer; an n-type electrode coupled to then-type semiconductor layer; a p-type electrode coupled to the p-typesemiconductor layer; and a wall surrounding the p-type electrode.

The display apparatus may further include a first bonding portionbonding the plurality of blue light emitting diodes to the supportsubstrate; a second bonding portion bonding the plurality of green lightemitting diodes to the support substrate; and a third bonding portionbonding the plurality of red light emitting diodes to the supportsubstrate, and the first to third bonding portions may have differentmelting points.

The display apparatus may further include an anisotropic conductive filmelectrically connecting the light emitting diode part to the TFT panelunit.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light, and the display apparatus may furtherinclude a wavelength conversion part including at least one of a bluelight portion emitting the blue light, a green light portion emittinggreen light through conversion of the blue light into the green light,and a red light portion emitting red light through conversion of theblue light into the red light.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light and red light emitting diodes emitting redlight, and the display apparatus may further include a wavelengthconversion part including at least one of a blue light portion emittingthe blue light, a green light portion emitting green light throughconversion of the blue light into the green light, and a red lightportion emitting the red light.

The wavelength conversion part may be formed on a third substrate andthe first substrate may be coupled to the third substrate to allowwavelength conversion of light emitted from the plurality of lightemitting diodes. The green light portion and the red light portion mayinclude phosphors. Specifically, the green light portion may includenitride phosphors and the red light portion may include nitride orfluoride phosphors (KSF).

At least one of the first to third substrates may be a transparentsubstrate or an opaque flexible substrate.

The plurality of light emitting diodes may include blue light emittingdiodes emitting blue light, and the display apparatus may furtherinclude a white phosphor portion converting blue light emitted from theblue light emitting diodes into white light; and a color filterincluding a blue light portion allowing blue light of the white lightemitted through the white phosphor portion to pass therethrough, a greenlight portion allowing green light of the white light emitted throughthe white phosphor portion to pass therethrough, and a red light portionallowing red light of the white light emitted through the white phosphorportion to pass therethrough.

Each of the light emitting diodes may include an n-type semiconductorlayer, a p-type semiconductor layer, and an active layer interposedbetween the n-type semiconductor layer and the p-type semiconductorlayer, and a wall may be formed on the p-type semiconductor layer.

An exemplary embodiment further discloses a method of manufacturing adisplay apparatus including: forming a light emitting diode part suchthat a plurality of light emitting diodes is regularly arranged therein;and coupling the light emitting diode part to a TFT panel unit, whereinforming the light emitting diode part may include forming the pluralityof light emitting diodes on a substrate to be regularly arrangedthereon; transferring the plurality of light emitting diodes to astretchable substrate; two-dimensionally enlarging the stretchablesubstrate such that a separation distance between the light emittingdiodes is enlarged; and coupling at least one of the light emittingdiodes to a support substrate, with the separation distance between thelight emitting diodes enlarged by the stretchable substrate.

The separation distance between the light emitting diodes enlarged bythe stretchable substrate may be twice a width of the light emittingdiodes.

Coupling the light emitting diode part to the TFT panel unit may beperformed using an anisotropic conductive film.

According to exemplary embodiments, the display apparatus may employmicro-light emitting diodes formed of nitride semiconductors and thuscan provide high efficiency and high resolution to be applicable to awearable apparatus while reducing power consumption.

Further, the display apparatus according to the exemplary embodimentsmay employ a stretchable substrate, thereby providing more conveniencein manufacture of the display apparatus than manufacture of the displayapparatus using micro-light emitting diodes.

The foregoing general description and the following detailed descriptionare exemplary and explanatory and are intended to provide furtherexplanation of the claimed subject matter.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the disclosed technology, and are incorporated in andconstitute a part of this specification, illustrate exemplaryembodiments of the disclosed technology, and together with thedescription serve to describe the principles of the disclosedtechnology.

FIG. 1 is a sectional view of a display apparatus according to a firstexemplary embodiment of the present disclosure.

FIG. 2 is a perspective view of a light emitting part of the displayapparatus according to the first exemplary embodiment of the presentdisclosure.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K, 3L, 3M, 3N, 3O, and 3Pand FIGS. 4A, 4B, 4C, 4D, 4E, 4F, and 4G are sectional views and planviews illustrating a process of forming the light emitting diode part ofthe display apparatus according to the first exemplary embodiment of thepresent disclosure.

FIG. 5 is a sectional view of a display apparatus according to a secondexemplary embodiment of the present disclosure.

FIG. 6 is a sectional view of a display apparatus according to a thirdexemplary embodiment of the present disclosure.

FIG. 7 is a sectional view of a display apparatus according to a fourthexemplary embodiment of the present disclosure.

FIGS. 8A, 8B, 8C, 8D, 8E, and 8F show sectional views of a displayapparatus according to a fifth exemplary embodiment of the presentdisclosure.

DETAILED DESCRIPTION OF THE ILLUSTRATED EMBODIMENTS

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments. It is apparent, however,that various exemplary embodiments may be practiced without thesespecific details or with one or more equivalent arrangements. In otherinstances, well-known structures and devices are shown in block diagramform in order to avoid unnecessarily obscuring various exemplaryembodiments.

In the accompanying figures, the size and relative sizes of layers,films, panels, regions, etc., may be exaggerated for clarity anddescriptive purposes. Also, like reference numerals denote likeelements.

When an element or layer is referred to as being “on,” “connected to,”or “coupled to” another element or layer, it may be directly on,connected to, or coupled to the other element or layer or interveningelements or layers may be present. When, however, an element or layer isreferred to as being “directly on,” “directly connected to,” or“directly coupled to” another element or layer, there are no interveningelements or layers present. For the purposes of this disclosure, “atleast one of X, Y, and Z” and “at least one selected from the groupconsisting of X, Y, and Z” may be construed as X only, Y only, Z only,or any combination of two or more of X, Y, and Z, such as, for instance,XYZ, XYY, YZ, and ZZ. Like numbers refer to like elements throughout. Asused herein, the term “and/or” includes any and all combinations of oneor more of the associated listed items.

Although the terms first, second, etc. may be used herein to describevarious elements, components, regions, layers, and/or sections, theseelements, components, regions, layers, and/or sections should not belimited by these terms. These terms are used to distinguish one element,component, region, layer, and/or section from another element,component, region, layer, and/or section. Thus, a first element,component, region, layer, and/or section discussed below could be termeda second element, component, region, layer, and/or section withoutdeparting from the teachings of the present disclosure.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, may be used herein for descriptive purposes, and,thereby, to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the drawings. Spatiallyrelative terms are intended to encompass different orientations of anapparatus in use, operation, and/or manufacture in addition to theorientation depicted in the drawings. For example, if the apparatus inthe drawings is turned over, elements described as “below” or “beneath”other elements or features would then be oriented “above” the otherelements or features. Thus, the exemplary term “below” can encompassboth an orientation of above and below. Furthermore, the apparatus maybe otherwise oriented (e.g., rotated 90 degrees or at otherorientations), and, as such, the spatially relative descriptors usedherein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof.

Various exemplary embodiments are described herein with reference tosectional illustrations that are schematic illustrations of idealizedexemplary embodiments and/or intermediate structures. As such,variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should not beconstrued as limited to the particular illustrated shapes of regions,but are to include deviations in shapes that result from, for instance,manufacturing. Regions illustrated in the drawings are schematic innature and their shapes are not intended to illustrate the actual shapeof a region of a device and are not intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and will not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a sectional view of a display apparatus according to a firstexemplary embodiment of the present disclosure, and FIG. 2 is aperspective view of a light emitting part of the display apparatusaccording to the first exemplary embodiment of the present disclosure.

Referring to FIG. 1, a display apparatus 100 according to the firstexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150.

Referring to FIG. 1 and FIG. 2, the light emitting diode part 110includes light emitting diodes 112, a support substrate 114, transparentelectrodes 116, a blocking part 118, an insulation layer 120, and firstconnection electrodes 122.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and the plurality of light emitting diodes 112 is regularlyarranged on the support substrate 114. For example, the plurality oflight emitting diodes 112 may be arranged in a matrix form thereon, asshown in FIG. 2. In this exemplary embodiment, the plurality of lightemitting diodes 112 includes a plurality of blue light emitting diodes112 a emitting blue light, a plurality of green light emitting diodes112 b emitting green light, and a plurality of red light emitting diodes112 c emitting red light. The plural blue light emitting diodes 112 a,the plural green light emitting diodes 112 b and the plural red lightemitting diodes 112 c are alternately arranged such that the blue lightemitting diode 112 a, the green light emitting diode 112 b and the redlight emitting diode 112 c are adjacent to one another.

In this exemplary embodiment, as shown in FIG. 2, the light emittingdiode part 110 allows the display apparatus 100 to be driven by powerapplied from an exterior power source. That is, an image can bereproduced through on-off combination of the light emitting diodes 112in the light emitting diode part 110 without using a separate LCD.Accordingly, a region including a single light emitting diode 112 may beused as a sub-pixel in the display apparatus 100. As shown in FIG. 2, inthe light emitting diode part 110, one sub-pixel may have a larger sizethan the light emitting diode 112 disposed inside the sub-pixel.

Referring to FIG. 1 again, each of the light emitting diodes 112 mayinclude an n-type semiconductor layer 23, an active layer 25, a p-typesemiconductor layer 27, an n-type electrode 31, a p-type electrode 33,and a wall 35. The n-type semiconductor layer 23, the active layer 25and the p-type semiconductor layer 27 may include Group III-V basedcompound semiconductors. By way of example, the n-type semiconductorlayer 23, the active layer 25 and the p-type semiconductor layer 27 mayinclude nitride semiconductors such as (Al, Ga, In)N. In other exemplaryembodiments, locations of the n-type semiconductor layer 23 and thep-type semiconductor layer 27 can be interchanged.

The n-type semiconductor layer 23 may include an n-type dopant (forexample, Si) and the p-type semiconductor layer 27 may include a p-typedopant (for example, Mg). The active layer 25 is interposed between then-type semiconductor layer 23 and the p-type semiconductor layer 27. Theactive layer 25 may have a multi-quantum well (MQW) structure and acomposition of the active layer 25 may be determined so as to emit lighthaving a desired peak wavelength.

In addition, the light emitting structure including the n-typesemiconductor layer 23, the active layer 25 and the p-type semiconductorlayer 27 may be formed similar to a vertical type light emitting diode112. In this structure, the n-type electrode 31 may be formed on anouter surface of the n-type semiconductor layer 23 and the p-typeelectrode 33 may be formed on an outer surface of the p-typesemiconductor layer 27.

Further, as shown in FIG. 1, in order to couple each of the lightemitting diodes 112 similar to the vertical type light emitting diode tothe transparent electrode 116 of the support substrate 114, a bondingportion S may be formed between the p-type electrode 33 and thetransparent electrode 116, and the wall 35 may be formed to prevent thebonding portion S from escaping from a space between the p-typeelectrode 33 and the transparent electrode 116.

The wall 35 may be formed to cover a portion of the p-type electrode 33such that the p-type electrode 33 can be exposed on the p-typesemiconductor layer 27, and may be composed of a plurality of layers, asshown in the drawings. The wall 35 may include a first layer and asecond layer, and may be formed by forming the first layer including SiNon the p-type semiconductor layer 27 so as to cover a portion of thep-type electrode 33, followed by forming the second layer including SiO₂on the first layer. The second layer may have a greater thickness and asmaller width than the first layer.

The support substrate 114 is a substrate on which the plurality of lightemitting diodes 112 will be mounted, and may be an insulation substrate,a conductive substrate, or a circuit board. By way of example, thesupport substrate 114 may be a sapphire substrate, a gallium nitridesubstrate, a glass substrate, a silicon carbide substrate, a siliconsubstrate, a metal substrate, or a ceramic substrate. The supportsubstrate 114 is formed on an upper surface thereof with the pluralityof conductive patterns to be electrically connected to the plurality oflight emitting diodes 112 and may include a circuit pattern therein, asneeded. The support substrate 114 may be a flexible substrate.

The transparent electrode 116 may be formed on the support substrate 114and may be electrically connected to the p-type electrode 33 of thelight emitting diode 112. In this exemplary embodiment, a plurality oftransparent electrodes 116 may be formed on the support substrate 114,and one light emitting diode 112 may be coupled to one transparentelectrode 116, or the plurality of light emitting diodes 112 may becoupled to one transparent electrode 116, as needed. In addition, theplural transparent electrodes 116 may be separated from each other onthe support substrate 114. By way of example, the transparent electrodes116 may be formed of indium tin oxide (ITO) and the like.

The blocking part 118 is formed on the support substrate 114 and isprovided in plural. The blocking part 118 allows light emitted from thelight emitting diodes 112 to be emitted to the outside only through thetransparent electrodes 116 and prevents light emitted from a certainlight emitting diode from mixing with light emitted from adjacent lightemitting diodes 112. Accordingly, the blocking part 118 may be formedbetween the transparent electrodes 116 separated from each other and maybe formed to cover a portion of each of the transparent electrodes 116,as needed. In this exemplary embodiment, the blocking part 118 is formedof chromium (Cr).

The insulation layer 120 surrounds each of the light emitting diodes 112and covers an exposed surface of a connecting plane between the lightemitting diodes 112. With this structure, the insulation layer 120 maybe formed to partially cover the blocking part 118. In the structurewherein the insulation layer 120 surrounds each of the light emittingdiodes 112, the n-type semiconductor layer 23 and the n-type electrode31 of each of the light emitting diodes 112 can be exposed through theinsulation layer 120.

The first connection electrodes 122 cover the insulation layer 120 andmay also cover the n-type semiconductor layer 23 and the n-typeelectrode 31 not covered by the insulation layer 120. Accordingly, thefirst connection electrodes 122 may be electrically connected to then-type semiconductor layer 23.

The TFT panel unit 130 includes a panel substrate 132 and secondconnection electrodes 134, and is coupled to the light emitting diodepart 110 to supply power to the light emitting diode part 110. The TFTpanel unit 130 controls power supplied to the light emitting diode part110 to allow only some of the light emitting diodes 112 in the lightemitting diode part 110 to emit light.

The panel substrate 132 has a TFT drive circuit therein. The TFT drivecircuit may be a circuit for driving an active matrix (AM) or a circuitfor driving a passive matrix (PM).

The second connection electrode 134 may be electrically connected to theTFT drive circuit of the panel substrate 132 and to the first connectionelectrode 122 of the light emitting diode part 110. In this structure,power supplied through the TFT drive circuit can be supplied to each ofthe light emitting diodes 112 through the first and second connectionelectrodes 122, 134. In this exemplary embodiment, the second connectionelectrode 134 may be covered by a separate protective layer, which mayinclude SiN_(x).

The anisotropic conductive film 150 serves to electrically connect thelight emitting diode part 110 to the TFT panel unit 130. The anisotropicconductive film 150 includes an adhesive organic insulation material andcontains conductive particles uniformly dispersed therein to achieveelectrical connection. The anisotropic conductive film 150 exhibitsconductivity in the thickness direction thereof and insulationproperties in the plane direction thereof. In addition, the anisotropicconductive film exhibits adhesive properties and can be used to bond thelight emitting diode part 110 to the TFT panel such that the lightemitting diode part 110 can be electrically connected to the TFT paneltherethrough. Particularly, the anisotropic conductive film 150 can beadvantageously used to connect ITO electrodes which are difficult tosolder at high temperature.

As such, in the structure wherein the light emitting diode part 110 iscoupled to the TFT panel via the anisotropic conductive film 150, thefirst connection electrode 122 of the light emitting diode part 110 iselectrically connected to the second connection electrode 134 of the TFTpanel unit 130, thereby forming an electrode connection portion 152.

FIGS. 3A-3P and FIGS. 4A-4G are sectional views and plan viewsillustrating a process of forming the light emitting diode part 110 ofthe display apparatus 100 according to the first exemplary embodiment ofthe present disclosure.

The process of forming the light emitting diode part 110 according tothis exemplary embodiment will be described with reference to FIGS.3A-3P and FIGS. 4A-4G. First, as shown in FIG. 3A, an n-typesemiconductor layer 23, an active layer 25 and a p-type semiconductorlayer 27 are sequentially grown on a growth substrate. Then, a p-typeelectrode 33 is formed on the p-type semiconductor layer 27. In thisexemplary embodiment, a plurality of p-type electrodes 33 may be formedto be separated from each other by a predetermined distance such thatone p-type electrode 33 is provided to one light emitting diode 112.

Referring to FIG. 3B, after forming the p-type electrodes 33, a wall 35is formed on the p-type semiconductor layer 27. The wall 35 may becomposed of first and second layers. The first layer includes SiN and isformed to cover the entirety of the p-type semiconductor layer 27 whilecovering a portion of each of the p-type electrodes 33. The second layerincludes SiO₂ and is formed on the first layer. The second layer mayhave a greater thickness than the first layer and may be formed on aregion of the first layer in which the p-type electrode 33 is notformed.

Referring to FIG. 3C, after the wall 35 is formed on the p-typesemiconductor layer 27, the grown semiconductor layers are coupled to afirst substrate. In this process, the second layer of the wall 35 iscoupled to the first substrate. The first substrate may be the same asthe support substrate 114 and may be a sapphire substrate in thisexemplary embodiment.

Referring to FIG. 3D, with the semiconductor layers coupled to the firstsubstrate, the growth substrate may be removed from the semiconductorlayers by LLO and the semiconductor layers may be divided intoindividual light emitting diodes 112 by etching. Here, division of thesemiconductor layers into individual light emitting diodes 112 may beperformed by dry etching.

Referring to FIG. 3E, after the semiconductor layers are divided intothe individual light emitting diodes 112, n-type electrodes 31 may beformed on the n-type semiconductor layer 23. Alternatively, the n-typeelectrodes 31 may be formed before division of the semiconductor layersinto the individual light emitting diodes 112. Then, as shown in FIG.3F, the light emitting diodes 112 are coupled to a second substrate suchthat the n-type electrodes 31 can be coupled to the second substrate,followed by removing the first substrate. The second substrate may bethe same kind of substrate as the first substrate.

Then, as shown in FIG. 3G, the light emitting diodes 112 are coupled toa third substrate such that the wall 35 can be coupled to the thirdsubstrate, followed by removing the second substrate. In this exemplaryembodiment, the third substrate may be a stretchable substrate that isstretchable in the plane direction thereof. Thus, as shown in FIG. 3H,the stretchable third substrate is stretched to enlarge distancesbetween the light emitting diodes 112.

With the distances between the light emitting diodes 112 enlarged, thelight emitting diodes 112 are coupled to a fourth substrate such thatthe n-type electrodes 31 can be coupled to the fourth substrate, asshown in FIG. 3I. As a result, the distances between the light emittingdiodes 112 can be maintained by the stretchable third substrate. In thisexemplary embodiment, the fourth substrate may include a flexible baseand a bonding layer formed on the base.

Then, referring to FIG. 3J, the plurality of light emitting diodes 112arranged on the fourth substrate is bonded to the support substrate 114,which may be formed with a bonding portion S at a location correspondingto each of the light emitting diodes 112. With the transparentelectrodes 116 and the blocking part 118 formed on the support substrate114, the bonding portion S is formed at a mounting location of each ofthe light emitting diodes 112 on the support substrate 114. Accordingly,even when the entire plural light emitting diodes coupled to the fourthsubstrate are transferred to an upper surface of the support substrate114, the light emitting diodes 112 can be transferred only to locationsof the support substrate 114 at which the bonding portions S are formed.

Referring to FIG. 3K, external force may be applied only to the lightemitting diodes 112 disposed corresponding to the locations of thebonding portions S on the support substrate 114 among the light emittingdiodes 112 coupled to the fourth substrate, such that only the lightemitting diodes 112 disposed corresponding to the bonding portions S canbe bonded to the support substrate 114. As a result, as shown in FIG.3L, the light emitting diodes 112 can be coupled to the supportsubstrate at the locations of the bonding portions S thereon.

Although not shown in the drawings, in the case where only some lightemitting diodes 112 are selectively coupled to the support substrate 114by applying external force only to target light emitting diodes amongthe plurality of light emitting diodes 112 arranged on the fourthsubstrate as shown in FIG. 3K, the stretchable third substrate may beomitted. That is, only some light emitting diodes 112 may be coupled tothe support substrate 114 by selectively applying external force only totarget light emitting diodes to be coupled to the support substrate 114using a flexible fourth substrate instead of the second substrate shownin FIG. 3F.

In this exemplary embodiment, with regard to mounting the light emittingdiodes 112 on the support substrate 114 as shown in FIG. 3L, thefollowing description will be given of mounting blue light emittingdiodes 112 a, green light emitting diodes 112 b and red light emittingdiodes 112 c on the support substrate 114 with reference to FIGS. 4A-4G.Here, the processes of manufacturing each of the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c are the same those shown in FIG. 3A to FIG. 3I.

Like FIG. 3J, FIG. 4A shows the bonding portions S formed on the supportsubstrate 114, in which the bonding portions S are formed at alllocations on the support substrate 114 at which the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c are coupled, respectively. The bonding portions Smay be classified into first to third bonding portions S1, S2, S3. Thefirst bonding portion S1 is formed to bond the blue light emittingdiodes 112 a to the support substrate and the second bonding portion S2is formed to bond the green light emitting diodes 112 b thereto. Thethird bonding portion S3 is formed to bond the red light emitting diodes112 c thereto.

The first to third bonding portions S1, S2, S3 may have differentbonding temperatures. Specifically, the first bonding portion S1 has thehighest bonding temperature and the third bonding portion S3 has thelowest bonding temperature. For example, the first bonding portion S1 isformed of AgSn and has a bonding temperature of about 230° C. and thesecond bonding portion S2 is formed of ZnSn and has a bondingtemperature of about 198° C. The third bonding portion S3 is formed ofIn and has a bonding temperature of about 157° C. The bondingtemperatures of the first to third bonding portions S1, S2, S3 aredifferently set due to different bonding sequences of the light emittingdiodes 112 to the respective bonding portions S.

Since the blue light emitting diodes 112 a are first bonded to thesupport substrate 114, the first bonding portion S1 has the highestbonding temperature. Thus, since the first bonding portion S1 has ahigher bonding temperature than the second bonding portion S2 or thethird bonding portion S3, the first bonding portion S1 can maintain abonded state of the blue light emitting diodes 112 a during bonding ofthe green light emitting diodes 112 b or the red light emitting diodes112 c.

After the first to third bonding portions S1, S2, S3 are formed on thesupport substrate 114 as shown in FIG. 4A, the fourth substrate on whichthe blue light emitting diodes 112 a are formed is placed at acorresponding location on the support substrate 114, and the blue lightemitting diodes 112 a are coupled to the support substrate 114, as shownin FIG. 4B. Here, the distances between the blue light emitting diodes112 a formed on the fourth substrate are widened by the stretchablesubstrate, which is provided as the third substrate, as compared withthe distances between the blue light emitting diodes 112 a formed on thegrowth substrate. Accordingly, each of the blue light emitting diodes112 a is not disposed at a location corresponding to the second bondingportion S2 or the third bonding portion S3. Then, with the blue lightemitting diodes 112 a contacting the first bonding portion S1, the firstbonding portion S1 is heated to about 230° C. and cooled to bond theblue light emitting diodes 112 a to the support substrate 114 via thefirst bonding portion S1.

FIG. 4C shows the blue light emitting diodes 112 a bonded to the supportsubstrate 114. Thereafter, the fourth substrate on which the green lightemitting diodes 112 b are formed is placed at a corresponding locationon the support substrate 114, and the green light emitting diodes 112 bare bonded to the support substrate 114, as shown in FIG. 4D. Here, thedistances between the green light emitting diodes 112 b formed on thefourth substrate are greater than the distances between the green lightemitting diodes 112 b formed on the growth substrate, as describedabove. Accordingly, there is no interference between the blue lightemitting diode 112 a and the green light emitting diode 112 b placed atlocations corresponding to the second bonding portion S2 formed on thesupport substrate 114. Then, with the green light emitting diodes 112 bcontacting the second bonding portion S2, the second bonding portion S2is heated to about 198° C. and cooled to bond the green light emittingdiodes 112 b to the support substrate 114 via the second bonding portionS2. In this way, the green light emitting diodes 112 b can be bonded tothe support substrate 114.

FIG. 4E shows the blue light emitting diodes 112 a and the green lightemitting diodes 112 b bonded to the support substrate 114. Thereafter,the fourth substrate on which the red light emitting diodes 112 c areformed is placed at a corresponding location on the support substrate114, and the red light emitting diodes 112 c are bonded to the supportsubstrate 114, as shown in FIG. 4F. Here, the distances between the redlight emitting diodes 112 c formed on the fourth substrate are greaterthan the distances between the red light emitting diodes 112 c formed onthe growth substrate, as described above, thereby preventinginterference with the blue light emitting diodes 112 a or the greenlight emitting diodes 112 b disposed on the support substrate 114. Then,with the red light emitting diodes 112 c contacting the third bondingportion S3, the third bonding portion S3 are heated to about 157° C. andcooled to bond the red light emitting diodes 112 c o the supportsubstrate 114 via the third bonding portion S3. In this way, the greenlight emitting diodes 112 b can be bonded to the support substrate 114.FIG. 4G shows the blue light emitting diode 112 a, the green lightemitting diode 112 b and the red light emitting diode 112 c bonded tothe support substrate 114.

In this exemplary embodiment, separation distances between the bluelight emitting diode 112 a, the green light emitting diode 112 b and thered light emitting diode 112 c formed on the different fourth substratesmay be at least twice the width of each of the light emitting diodes112. In this way, with the distances between the light emitting diodesmaintained at at least twice the width of each of the light emittingdiodes on the support substrate 114, the light emitting diodes 112 arebonded to the support substrate 114, thereby preventing interferencebetween the other light emitting diodes 112.

FIG. 3M is a sectional view corresponding to the plan view shown in FIG.4G. That is, referring to FIG. 3M, each of the blue light emittingdiodes 112 a, the green light emitting diodes 112 b and the red lightemitting diodes 112 c is bonded to the support substrate 114. In thisstate, an insulation layer 120 may be formed to cover the entirety ofeach of the light emitting diodes 112 excluding a portion thereof, asshown in FIG. 3N. The insulation layer 120 is formed to cover both thetransparent electrodes 116 and the blocking part 118 while surroundingeach of the light emitting diodes 112. With this structure, theinsulation layer 120 can prevent the transparent electrode 116electrically connected to each of the light emitting diodes 112 frombeing exposed to the outside. An upper surface of the n-typesemiconductor layer 23 and the n-type electrode 31 of each of the lightemitting diodes 112 can be exposed through an upper surface of theinsulation layer 120.

With the n-type semiconductor layer 23 and the n-type electrode 31exposed through the upper surface of the insulation layer 120, firstconnection electrodes 122 may be formed on the upper surface of theinsulation layer 120 to cover the n-type semiconductor layer 23 and then-type electrodes 31, as shown in FIG. 30. As a result, the lightemitting diode part 110 according to this exemplary embodiment can beformed.

Thereafter, the light emitting diode part 110 is bonded to the TFT panelunit 130 via an anisotropic connection film, as shown in FIG. 3P,thereby providing the display apparatus 100 according to the firstexemplary embodiment, as shown in FIG. 1.

FIG. 5 is a sectional view of a display apparatus according to a secondexemplary embodiment of the present disclosure.

Referring to FIG. 5, a display apparatus 100 according to the secondexemplary embodiment of the present disclosure includes a light emittingdiode part 110, a TFT panel unit 130, and an anisotropic conductive film150. Description of the same components as those of the first exemplaryembodiment will be omitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, an insulation layer120, first connection electrodes 122, a transparent substrate 124, aphosphor layer 126, and a protective substrate 128.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a emitting blue light maybe used as the light emitting diodes 112. The blue light emitting diodes112 a are electrically connected to the transparent electrodes 116 andthe blocking part 118 may be form ed between the transparent electrodes116. In addition, the transparent substrate 124 may be formed on thetransparent electrode 116. The transparent substrate 124 may serve asthe support substrate 114 of the display apparatus 100 according to thefirst exemplary embodiment. Alternatively, as in the first exemplaryembodiment, after forming the light emitting diode part 110 using thesupport substrate 114, the support substrate 114 may be removedtherefrom and the transparent substrate 124 may be formed again.

The phosphor layer 126 may be formed on an upper surface of thetransparent substrate 124. The phosphor layer 126 may be formed on theblue light emitting diodes 112 a such that one of a green phosphor layer126 b, a red phosphor layer 126 c and a transparent layer 126 e isformed thereon. In addition, a blocking layer 126 d may be formedbetween the green phosphor layer 126 b, the red phosphor layer 126 c andthe transparent layer 126 e. The green phosphor layer 126 b convertswavelengths of light emitted from the blue light emitting diode 112 asuch that green light can be emitted from the green phosphor layer 126b, and the red phosphor layer 126 c converts wavelengths of lightemitted from the blue light emitting diode 112 a such that red light canbe emitted from the red phosphor layer 126 c. The transparent layer 126e is placed near the green phosphor layer 126 b and the red phosphorlayer 126 c to allow blue light emitted from the blue light emittingdiode 112 a to pass therethrough. Accordingly, red light, green lightand blue light can be emitted through the phosphor layer 126.

The protective substrate 128 may be formed on an upper surface of thephosphor layer 126. The protective substrate 128 can prevent thephosphor layer 126 from being exposed to the outside and may be formedof a transparent material as in the transparent substrate 124.

FIG. 6 is a sectional view of a display apparatus according to a thirdexemplary embodiment of the present disclosure.

Referring to FIG. 6, a display apparatus 100 according to the thirdexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150. Description ofthe same components as those of the first exemplary embodiment will beomitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, a white phosphor film125, and a color film.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a are used as in thesecond exemplary embodiment. The blue light emitting diodes 112 a areelectrically connected to the transparent electrodes 116 and theblocking part 118 may be formed between the transparent electrodes 116.The white phosphor film 125 may be formed on an upper surface of thetransparent electrode 116.

The white phosphor film 125 converts blue light emitted from the bluelight emitting diode 112 a into white light. To this end, the whitephosphor film 125 may include a green phosphor and a red phosphor.

The color filter 127 may be formed on an upper surface of the whitephosphor film 125. The color filter 127 may be formed in a film shapeand filters white light emitted from the white phosphor film 125excluding one of blue light, green light and red light of the whitelight. The color filter 127 may include a blue light portion 127 a thatfilters white light to allow blue light to pass therethrough, a greenlight portion 127 b that filters white light to allow green light topass therethrough, and a red light portion 127 c that filters whitelight to allow red light to pass therethrough. The color filter 127 mayfurther include a transparent portion 127 e to allow white light to passtherethrough without wavelength conversion.

The blue light portion 127 a, the green light portion 127 b, the redlight portion 127 c and the transparent portion 127 e may be disposedadjacent one another. Alternatively, a light blocking portion 127 d maybe formed between the blue light portion 127 a, the green light portion127 b, the red light portion 127 c and the transparent portion 127 e.

FIG. 7 is a sectional view of a display apparatus according to a fourthexemplary embodiment of the present disclosure.

Referring to FIG. 7, a display apparatus 100 according to the fourthexemplary embodiment includes a light emitting diode part 110, a TFTpanel unit 130, and an anisotropic conductive film 150. Description ofthe same components as those of the first and third exemplaryembodiments will be omitted.

The light emitting diode part 110 includes light emitting diodes 112,transparent electrodes 116, a blocking part 118, a transparent substrate124, a white phosphor film 125, and a color film.

The light emitting diode part 110 includes a plurality of light emittingdiodes 112, and blue light emitting diodes 112 a are used as in thesecond exemplary embodiment. The blue light emitting diodes 112 a areelectrically connected to the transparent electrodes 116 and theblocking part 118 may be formed between the transparent electrodes 116.The transparent substrate 124 may be formed on an upper surface of thetransparent electrode 116.

The transparent substrate 124 may serve as the support substrate 114 ofthe display apparatus 100 according to the first exemplary embodiment.Alternatively, as in the first exemplary embodiment, after forming thelight emitting diode part 110 using the support substrate 114, thesupport substrate 114 may be removed therefrom and the transparentsubstrate 124 may be formed again.

The white phosphor film 125 may be formed on an upper surface of thetransparent electrode 116 and the color filter 127 may be formed on anupper surface of the white phosphor film 125. The white phosphor film125 and the color filter 127 are the same as those of the displayapparatus according to the third exemplary embodiment and detaileddescriptions thereof will be omitted.

FIGS. 8A-8F show sectional views of a display apparatus according to afifth exemplary embodiment of the present disclosure. FIGS. 8A-8F aresectional views illustrating a process of manufacturing the displayapparatus according to the fifth exemplary embodiment, in which aplurality of light emitting structures grown on a growth substrate iscoupled to a support substrate after adjustment of separation distancesbetween the light emitting structures using a stretchable sheet SS.

The display apparatus according to the fifth exemplary embodimentincludes light emitting structures 123, n-type bumps, p-type bumps, asupport substrate 37, and a wavelength conversion part. Description ofthe same components as those of the above exemplary embodiments will beomitted. The following description will focus on a process of couplinglight emitting structures 123 grown on the growth substrate 21 to thesupport substrate 37 with reference to FIGS. 8A-8F.

The light emitting structure 123 may include a partially exposed regionof the n-type semiconductor layer, which is formed by partially removingthe p-type semiconductor layer and the active layer. An n-type electrodepad may be placed on the exposed region of the n-type semiconductorlayer and a p-type electrode pad may be placed on the p-typesemiconductor layer.

Although the light emitting structure 123 uses a flip-chip type lightemitting diode in this exemplary embodiment, it should be understoodthat a vertical type light emitting diode or a lateral type lightemitting diode may also be used.

The growth substrate 21 may be selected from among any substratesallowing growth of nitride semiconductor layers thereon and may be aninsulation or conductive substrate. By way of example, the growthsubstrate 21 may be a sapphire substrate, a silicon substrate, a siliconcarbide substrate, an aluminum nitride substrate, or a gallium nitridesubstrate. In this exemplary embodiment, the growth substrate 21 may bea sapphire substrate and may include a C-plane as a growth plane onwhich nitride semiconductor layers are grown.

As shown in FIG. 8A, the plurality of light emitting structures 123 isgrown on the growth substrate 21. In this exemplary embodiment, theplural light emitting structures 123 are arranged in a predeterminedpattern on the growth substrate 21 and are separated from each otherduring growth.

With the growth substrate 21 turned upside down, the light emittingstructures 123 grown on the growth substrate 21 are coupled to an uppersurface of the stretchable sheet, as shown in FIG. 8B. In addition,after the plurality of light emitting structures 123 is coupled to thestretchable sheet (SS), the growth substrate 21 is removed from thelight emitting structures by LLO and the like, as shown in FIG. 8C.

Thereafter, as shown in FIG. 8D, since the stretchable sheet (SS) can betwo-dimensionally stretched or compressed, the separation distancesbetween the light emitting structures 123 can be adjusted by stretchingor compressing the stretchable sheet (SS). FIG. 8D shows one example inwhich the separation distances between the light emitting structures 123are enlarged by stretching the stretchable sheet (SS). In oneembodiment, the stretchable sheet (SS) may be a blue sheet.

In this way, the stretchable sheet (SS) is turned upside down in astretched state and coupled to a fixing sheet (FS) via the lightemitting structures 123 such that the light emitting structures 123 arecoupled to the fixing sheet. This state is shown in FIG. 8E, and afterthe plurality of light emitting structures 123 is coupled to the fixingsheet (FS), the stretchable sheet (SS) is removed from the uppersurfaces of the plurality of light emitting structures 123. In thisexemplary embodiment, since the stretchable sheet (SS) can be uniformlystretchable in two dimensions, the distances between the plural lightemitting structures 123 can be uniformly widened. The distances betweenthe plural light emitting structures 123 can be adjusted in various waysas needed. The fixing sheet (FS) serves to fix the locations of thelight emitting structure 123 in order to maintain the distances betweenthe plural light emitting structures 123 adjusted by the stretchablesheet (SS).

After each of the light emitting structures 123 is coupled to the fixingsheet (FS), the plurality of light emitting structures 123 is coupled tothe support substrate 37 and the fixing sheet (FS) is removed from thelight emitting structures, as shown in FIG. 8F. In this exemplaryembodiment, the support substrate 37 includes conductive patterns orinterconnection circuits, and may be a general PCB, a flexiblesubstrate, or a stretchable substrate like the stretchable sheet (SS).

As described above, since the separation distances between the plurallight emitting structures 123 may be adjusted using the stretchablesheet (SS), the light emitting structures 123 may be simultaneouslytransferred to the support substrate after uniformly increasing thedistances therebetween. Accordingly, the plurality of light emittingstructures 123 used in the display apparatus according to the presentdisclosure may also be used not only in a small wearable apparatus, butalso in a large display.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concept is not limitedto such embodiments, but rather to the broader scope of the presentedclaims and various obvious modifications and equivalent arrangements.

What is claimed is:
 1. A display apparatus, comprising: a firstsubstrate comprising a plurality of light emitting diodes regularlyarranged on the first substrate; and a second substrate comprising a TFTpanel unit comprising a plurality of TFTs driving the light emittingdiodes, wherein the first substrate and the second substrate are coupledto each other so as to face each other such that the light emittingdiodes are electrically connected to the TFTs, respectively, wherein thefirst substrate comprises: a support substrate; a plurality of bluelight emitting diodes arranged on an upper surface of the supportsubstrate; a plurality of green light emitting diodes arranged on theupper surface of the support substrate to be placed adjacent the bluelight emitting diodes; and a plurality of red light emitting diodesarranged on the upper surface of the support substrate to be placedadjacent either the blue light emitting diodes or the green lightemitting diodes, and further comprising: a first bonding portion bondingthe blue light emitting diodes to the support substrate; a secondbonding portion bonding the green light emitting diodes to the supportsubstrate; and a third bonding portion bonding the red light emittingdiodes to the support substrate, the first to third bonding portionshaving different melting points.
 2. The display apparatus according toclaim 1, wherein each of the blue light emitting diodes, the green lightemitting diodes and the red light emitting diodes comprises: an n-typesemiconductor layer; a p-type semiconductor layer; an active layerinterposed between the n-type semiconductor layer and the p-typesemiconductor layer; an n-type electrode coupled to the n-typesemiconductor layer; a p-type electrode coupled to the p-typesemiconductor layer; and a wall surrounding the p-type electrode.
 3. Thedisplay apparatus according to claim 1, further comprising: ananisotropic conductive film electrically connecting the first substrateto the second substrate.
 4. A display apparatus, comprising: a firstsubstrate comprising a plurality of light emitting diodes regularlyarranged on an upper surface of a support substrate; and a secondsubstrate comprising a TFT panel unit comprising a plurality of TFTsdriving the light emitting diodes, wherein the first substrate and thesecond substrate are coupled to each other so as to face each other suchthat the light emitting diodes are electrically connected to the TFTs,respectively, wherein the light emitting diodes comprises blue lightemitting diodes emitting blue light, the display apparatus furthercomprising: a wavelength conversion part comprising at least one of ablue light portion emitting the blue light, a green light portionemitting green light through conversion of the blue light into the greenlight, and a red light portion emitting red light through conversion ofthe blue light into the red light, wherein: the support substratecomprises a first bonding portion, a second bonding portion, and a thirdbonding portion, each of the first, second, and third bonding portion isconfigured for coupling the plurality of light emitting diodes thereto,and the first, the second, and the third bonding portions have differentmelting points.
 5. The display apparatus according to claim 4, whereinthe wavelength conversion part is disposed on a third substrate, and thefirst substrate is coupled to the third substrate to allow wavelengthconversion of light emitted from the light emitting diodes.
 6. Thedisplay apparatus according to claim 4, wherein the green light portioncomprises nitride phosphors and the red light portion comprises nitrideor fluoride phosphors (KSF).
 7. The display apparatus according to claim4, wherein at least one of the first, second, and third substrates is atransparent substrate or an opaque flexible substrate.
 8. The displayapparatus according to claim 4, wherein the wavelength conversion partcomprises: a white phosphor portion converting the blue light emittedfrom the blue light emitting diodes into white light; and a color filtercomprising a blue light portion configured to allow blue light of thewhite light emitted through the white phosphor portion to passtherethrough, a green light portion configured to allow green light ofthe white light emitted through the white phosphor portion to passtherethrough, and a red light portion configured to allow red light ofthe white light emitted through the white phosphor portion to passtherethrough.
 9. The display apparatus according to claim 1, whereineach of the light emitting diodes comprises an n-type semiconductorlayer, a p-type semiconductor layer, and an active layer interposedbetween the n-type semiconductor layer and the p-type semiconductorlayer, and a wall is formed on the p-type semiconductor layer.
 10. Amethod of manufacturing a display apparatus, comprising: forming a lightemitting diode part such that a plurality of light emitting diodes areregularly arranged on a support substrate; and coupling the lightemitting diode part to a TFT panel unit, wherein forming the lightemitting diode part comprises: forming the light emitting diodes on afirst substrate to be regularly arranged thereon; transferring the lightemitting diodes to a stretchable substrate; two-dimensionally enlargingthe stretchable substrate to enlarge a separation distance between thelight emitting diodes; and coupling at least one of the light emittingdiodes to the support substrate, with the separation distance betweenthe light emitting diodes enlarged by the stretchable substrate,wherein: the support substrate comprises a first bonding portion, asecond bonding portion, and a third bonding portion, each of the first,second, and third bonding portion is configured for coupling theplurality of light emitting diodes thereto, and the first, the second,and the third bonding portions have different melting points.
 11. Themethod of manufacturing a display apparatus according to claim 10,wherein the separation distance between the light emitting diodesenlarged by the stretchable substrate is twice a width of the lightemitting diodes.
 12. The method of manufacturing a display apparatusaccording to claim 10, wherein coupling the light emitting diode part tothe TFT panel unit is performed using an anisotropic conductive film.13. The method of manufacturing a display apparatus according to claim10, wherein the plurality of light emitting diodes comprises a pluralityof first color light emitting diodes, a plurality of second color lightemitting diodes, and a plurality of third color light emitting diodes,and coupling the light emitting diodes to the support substrate furthercomprising mounting the first, the second, and the third color lightemitting diodes on the first, the second, and the third bondingportions, respectively.
 14. A method of manufacturing a displayapparatus, comprising: forming a light emitting diode part such that aplurality of light emitting diodes are regularly arranged on a supportsubstrate, each of the light emitting diodes having a p-type electrode;and coupling the light emitting diode part to a TFT panel unit, whereinforming the light emitting diode part comprises forming the lightemitting diodes on a growth substrate to be regularly arranged thereonand exposing the p-type electrode of each light emitting diode;transferring the light emitting diodes to a stretchable substrate;two-dimensionally enlarging the stretchable substrate to enlarge aseparation distance between the light emitting diodes; coupling thelight emitting diodes to the support substrate, with the separationdistance between the light emitting diodes enlarged by the stretchablesubstrate, to re-expose the p-type electrode of each of the lightemitting diodes; wherein the support substrate comprises a first bondingportion, a second bonding portion, and a third bonding portion and thefirst to third bonding portions have different melting points.
 15. Themethod of manufacturing a display apparatus according to claim 14,wherein coupling the light emitting diode part to the TFT panel unit isperformed using an anisotropic conductive film to electrically connectthe p-type electrode of each of the light emitting diodes to the TFTpanel.
 16. The method of manufacturing a display apparatus according toclaim 14, wherein the plurality of light emitting diodes comprises aplurality of blue color light emitting diodes, a plurality of greencolor light emitting diodes, and a plurality of third color lightemitting diodes, and coupling the light emitting diodes to the supportsubstrate further comprises mounting the blue, the green, and the redcolor light emitting diodes on the first, the second, and the thirdbonding portions, respectively.